دیتاشیت MMBF170LT1G
مشخصات دیتاشیت
| نام دیتاشیت |
MMBF170LT1
|
| حجم فایل |
117.709
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi MMBF170LT1G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
225mW
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
60pF@10V
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Continuous Drain Current (Id):
500mA
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Gate Threshold Voltage (Vgs(th)@Id):
3V@1mA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
5Ω@10V,200mA
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Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
5Ohm @ 200mA, 10V
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Vgs(th) (Max) @ Id:
3V @ 1mA
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
60pF @ 10V
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FET Feature:
-
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Power Dissipation (Max):
225mW (Ta)
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Mounting Type:
Surface Mount
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Supplier Device Package:
SOT-23-3 (TO-236)
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Base Part Number:
MMBF17
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detail:
N-Channel 60V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
